2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/155145A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.4 pages, 3 figures, revised version, changed title, new figuresMesoscale and Nanoscale PhysicsMaterials ScienceSpin transference and magnetoresistance amplification in a transistortext