2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/26878This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_{1-x} As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, $300 K$, and is also increased by about 23% over that associated with temperature of 500 K.6 pages including 2 figuresMesoscale and Nanoscale PhysicsStrongly Correlated Electronstext