2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/22608We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves (SAWs) through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating SAW beam, up to n = 20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the SAW frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to be dI/I = +/- 25 ppm over 0.25 mV in gate voltage, which is better than previous results.11 pages, 4 figuresMesoscale and Nanoscale PhysicsAn improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic wavestext