2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/19595Highly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity approaching 90%. The reproducibility of the fabrication protocol makes it of interest for the experimental study of InAs-based superconductor-semiconductor hybrid devices.7 pages REVTeX, 3 figuresSuperconductivityMesoscale and Nanoscale PhysicsJosephson current in ballistic Nb/InAs/Nb highly transmissive junctionstext