2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/140286The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky barriers, originating from the work-function difference, is taken into account by a potential satisfying the Poisson equation with an appropriate boundary condition. Then, these field-effect characteristics are shown to be related by unique current-voltage characteristics of metal-Mott-insulator interfaces.6 pages, 4 figuresStrongly Correlated Electronstext