2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/221480The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.3 pages, Conference paper (Semiconductors 2009, 28 Sep - 3 Oct 2009, Novosibirsk-Tomsk, Russia)Statistical MechanicsThe metal-insulator transition in semiconductorstext