2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/25584Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged8 pages with 5 postscript figuresMaterials Sciencetext