2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/18395Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.8 pages, 6 figuresMesoscale and Nanoscale PhysicsStrongly Correlated Electronstext