2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/108440Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.4 pages, 4 figures. 1 ref and 1 footnote addedMesoscale and Nanoscale PhysicsQuantum Physicstext