2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/23049We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.4 pages, 3 figures. More data includedStrongly Correlated ElectronsMesoscale and Nanoscale Physicstext