2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/18973Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at ν=1 and ν=3. The data yield a valley gap that is strongly enhanced compared to the single-particle value and increases LINEARLY with magnetic field. This result has not been explained by existing theories.As published. 4 pages, 3 figuresCondensed Mattertext