2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/174755A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.Materials ScienceSi3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidationtext