2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/126230We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.Revtex4, 6 pages, 6 figuresMesoscale and Nanoscale PhysicsStrongly Correlated Electronstext