2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/98094We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space-charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement.4 pagesMaterials ScienceMesoscale and Nanoscale PhysicsSpin injection and accumulation in inhomogeneous semiconductorstext