Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices

2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/142531We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.22 pages, 6 figures, submitted to J. Appl. PhysMaterials ScienceNanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devicestext