2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/106916We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.5 pages, 4 figures, to be published in PRBMesoscale and Nanoscale PhysicsMaterials Sciencetext