2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/124694Strain induced spin-splitting is observed and characterized using pump-probe Kerr rotation spectroscopy in n-ZnSe epilayers grown on GaAs substrates. The spin-splitting energies are mapped out as a function of pump-probe separation, applied voltage, and temperature in a series of samples of varying epilayer thicknesses and compressive strain arising from epilayer-substrate lattice mismatch. The strain is independently quantified using photoluminescence and x-ray diffraction measurements. We observe that the magnitude of the spin splitting increases with applied voltage and temperature, and is highly crystal direction dependent, vanishing along [1 1-bar 0].9 pages, 3 figuresMaterials ScienceMesoscale and Nanoscale Physicstext