2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/113416We analyze generation of phonons in tunneling structures with two electron states coupled by electron-phonon interaction. The conditions of strong vibration excitations are determined and dependence of non-equilibrium phonon occupation numbers on the applied bias is found. For high vibration excitation levels self consistent theory for the tunneling transport is presented.11 pages, 6 figuresMesoscale and Nanoscale PhysicsTunneling current induced phonon generation in nanostructurestext