2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/216804We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.5 pages, 7 figuresMesoscale and Nanoscale Physicstext