2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/144276We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.6 pages, 7 figuresMaterials ScienceMesoscale and Nanoscale Physicstext