2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/25356X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.13 pages, 4 figuresMaterials Sciencetext