2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/145476We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500 degrees C and higher. A detailed description of the experimental aquipment is given. Its practical use is demonstrated by measuring temperature-dependent charcteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)General Physicstext