2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/172173Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and VB holes. These trapped charges are metastable and their reexcitation with low-energy photons results in anti-Stockes photoluminescence. The comparison of photoluminescence excitation spectra and PSL excitation spectra allows band analysis that supports the hypothesis of Frenkel-like exciton in hBN with a large binding energy.OpticsMaterials ScienceDefect-related photoluminescence of hexagonal boron nitridetext