2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/228527A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.4 pages, 3 figures, accepted for Applied Physics LettersMesoscale and Nanoscale PhysicsElectrostically defined few-electron double quantum dot in silicontext