2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/124966Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated QDs for applications in areas that require fine control of optical emission.3 FiguresOther Condensed MatterControl of optical emission in doped GaAs/AlGaAs nanofabricated quantum dotstext