2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/137012The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set of experimental data. The numerical results are given in graphic form and show, in particular, very short diffusion transit times across long distances. The computed figures require experimental confrontations; a test set-up is proposed.8 pages, 5 figuresMaterials ScienceOther Condensed MatterComputer simulated heat flow dynamics in Silicon at low temperaturestext