2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/132944Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. We propose that the microscopic origin of resistance switching in this class of materials is due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.13 pages, 3 figuresMaterials ScienceStrongly Correlated Electronstext