2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/168236Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.4 pages, 2 figures. To be published in physica status solidi c as the proceedings of the PASPS IV conferenceMaterials ScienceInterlayer exchange coupling in (Ga,Mn)As based multilayerstext