2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/25210A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.Extract from PhD dissertation, 18 pages, 9 figuresMaterials Sciencetext