2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/19824We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching technique we are able to observe the following unexpected feature: a linear temperature dependence of the measured mid-plateau conductance. We discuss an interpretation in terms of a temperature dependent, intrinsic series resistance, due to non-ballistic effects in the 2D-1D transition region. These results have been reproduced in several samples from different GaAs/GaAlAs heterostructures and observed in different experimental set-ups.7 pages, 6 figures; to appear in proceedings of ICPS 2002, EdinburghMesoscale and Nanoscale Physicstext