2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/135324We study the effects of localization on the Hall transport in a granular system at large tunneling conductance $g_{T}\gg 1$ corresponding to the metallic regime. We show that the first-order in 1/g_T weak localization correction to Hall resistivity of a two- or three-dimensional granular array vanishes identically, $\de ρ_{xy}^{WL}=0$. This result is in agreement with the one for ordinary disordered metals. Being due to an exact cancellation, our result holds for arbitrary relevant values of temperature T and magnetic field H, both in the ``homogeneous'' regime of very low T and H corresponding to ordinary disordered metals and in the ``structure-dependent'' regime of higher values of T or H.8 pages, 4 figuresMesoscale and Nanoscale PhysicsStrongly Correlated Electronstext