2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/21466Oscillations of the resistance observed under electromagnetic wave excitation in the high mobility GaAs/AlGaAs 2DES are examined as a function of the radiation frequency and the power, utilizing an empirical lineshape based on exponentially damped sinusoids. The fit-analysis indicates the resistance oscillation frequency, F, increases with the radiation frequency, n, at the rate dF/dn = 2.37 mTesla/GHz; the damping parameter, a, is approximately independent of n at constant power; and the amplitude, A, of the oscillations grows slowly with the incident power, at a constant temperature and frequency. The lineshape appears to provide a good description of the data.presented at the 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, 29 July - 2 August 2002Mesoscale and Nanoscale Physicstext