2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/25428Shot noise affects differently the nonlinear electron transport in semiconductor superlattices depending on the strength of the coupling among the superlattice quantum wells. Strongly coupled superlattices can be described by a miniband Boltzmann-Langevin equation from which a stochastic drift-diffusion equation is derived by means of a consistent Chapman-Enskog method. Similarly, shot noise in weakly coupled, highly doped semiconductor superlattices is described by a stochastic discrete drift-diffusion model. The current-voltage characteristics of the corresponding deterministic model consist of a number of stable branches corresponding to electric field profiles displaying two domains separated by a domain wall. If the initial state corresponds to a voltage on the middle of a stable branch and is suddenly switched to a final voltage corresponding to the next branch, the domains relocate after a certain delay time, called relocation time. The possible scalings of this mean relocation time are discussed using bifurcation theory and the classical results for escape of a Brownian particle from a potential well.14 pages, 2 figuresMesoscale and Nanoscale Physicstext