2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/17278Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers doesn't exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used.Materials Sciencetext