Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]

2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/113446A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.4 pages, no figuresMesoscale and Nanoscale PhysicsResponse to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]text