2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/25233We measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX center in unintentionally doped wurtize GaN is considered to be an oxygen impurity instead of silicon.9 pages, 3 figuresMaterials Sciencetext