2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/21909New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM) through a Schottky barrier modified with very thin heavily doped interfacial layer. We show that electrons with a certain spin projection are extracted from S, while electrons with the opposite spins are accumulated in S. The spin density increases and spin penetration depth decreases with current.4 pages, 2 figuresMaterials ScienceMesoscale and Nanoscale Physicstext