2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/127942We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.7 pages, 7 figures; the effect of r3 coupling included; typo correctedMaterials ScienceStrongly Correlated Electronstext