2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/126446We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.Mesoscale and Nanoscale PhysicsMaterials Sciencetext