Reply to the Comment on ``Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers''

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dc.creatorSarma, S. Das
dc.creatorHwang, E. H.
dc.date1999-01-14
dc.date.accessioned2026-07-07T03:12:37Z
dc.date.available2026-07-07T03:12:37Z
dc.descriptionThis is a Reply to the Comment (cond-mat/9812331) by Kravchenko et al. on our earlier work (cond-mat/9812216).
dc.description3 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/9901117
dc.identifierhttp://arxiv.org/abs/cond-mat/9901117
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28975
dc.subjectStrongly Correlated Electrons
dc.subjectDisordered Systems and Neural Networks
dc.titleReply to the Comment on ``Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers''
dc.typetext

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