Anharmonic decay of phonons in semiconductors from first-principles calculations

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The anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states.
4 pages, uuencoded, compressed POSTSCRIPT file (debernardi.ps.Z). To extract it, use uudecode and uncompress in turn, SISSA Ref. 116/94/CM/SC

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