Anharmonic decay of phonons in semiconductors from first-principles calculations

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dc.creatorDebernardi, Alberto
dc.creatorBaroni, Stefano
dc.creatorMolinari, Elisa
dc.date1994-08-18
dc.date.accessioned2026-07-07T03:07:24Z
dc.date.available2026-07-07T03:07:24Z
dc.descriptionThe anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states.
dc.description4 pages, uuencoded, compressed POSTSCRIPT file (debernardi.ps.Z). To extract it, use uudecode and uncompress in turn, SISSA Ref. 116/94/CM/SC
dc.identifierhttps://arxiv.org/abs/cond-mat/9408051
dc.identifierhttp://arxiv.org/abs/cond-mat/9408051
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27158
dc.subjectCondensed Matter
dc.titleAnharmonic decay of phonons in semiconductors from first-principles calculations
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