(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

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We fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV-V characteristics shows clear Coulomb diamonds at 1.1K. The metal-insulator gate structure allowed us to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.
14 pages, 4 figures. Accepted to Applied Physics Letters

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/121017

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0701046
 http://arxiv.org/abs/cond-mat/0701046

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arXiv