(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

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dc.creatorKita, Tomohiro
dc.creatorChiba, Daichi
dc.creatorOhno, Yuzo
dc.creatorOhno, Hideo
dc.date2007-01-03
dc.date.accessioned2026-07-07T07:38:09Z
dc.date.available2026-07-07T07:38:09Z
dc.descriptionWe fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV-V characteristics shows clear Coulomb diamonds at 1.1K. The metal-insulator gate structure allowed us to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.
dc.description14 pages, 4 figures. Accepted to Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/cond-mat/0701046
dc.identifierhttp://arxiv.org/abs/cond-mat/0701046
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/121017
dc.subjectMesoscale and Nanoscale Physics
dc.title(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator
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