An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve

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Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.
15 pages with figures

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Materials Science, Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/23831

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0404634
 http://arxiv.org/abs/cond-mat/0404634
 published in Physical Review Letters, vol.92, No.16, 167204(2004)
 doi:10.1103/PhysRevLett.92.167204

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