An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve

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dc.creatorJiang, Y.
dc.creatorAbe, S.
dc.creatorOchiai, T.
dc.creatorNozaki, T.
dc.creatorHirohata, A.
dc.creatorTezuka, N.
dc.creatorInomata, K.
dc.date2004-04-27
dc.date.accessioned2026-07-07T02:57:50Z
dc.date.available2026-07-07T02:57:50Z
dc.descriptionRecently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.
dc.description15 pages with figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0404634
dc.identifierhttp://arxiv.org/abs/cond-mat/0404634
dc.identifierpublished in Physical Review Letters, vol.92, No.16, 167204(2004)
dc.identifierdoi:10.1103/PhysRevLett.92.167204
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23831
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleAn Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve
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