Transient tunneling current of single electron transistors

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature effect on the transient current through a single quantum dot embedded into asymmetry barrier. It is found that the tunneling rate ratio significantly influences the feature of transient current. Finally, the oscillation structures on the exponential growth transient current of single hole transistors composed of germanium quantum dots is analyzed.
4 pages and 9 figures

Keywords

Mesoscale and Nanoscale Physics

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/105579

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0512378
 http://arxiv.org/abs/cond-mat/0512378

Collections

arXiv