Transient tunneling current of single electron transistors

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dc.creatorKuo, David M. -T.
dc.creatorLi, Pei-Wen
dc.creatorLai, W. T.
dc.date2005-12-16
dc.date.accessioned2026-07-07T06:53:25Z
dc.date.available2026-07-07T06:53:25Z
dc.descriptionThe transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature effect on the transient current through a single quantum dot embedded into asymmetry barrier. It is found that the tunneling rate ratio significantly influences the feature of transient current. Finally, the oscillation structures on the exponential growth transient current of single hole transistors composed of germanium quantum dots is analyzed.
dc.description4 pages and 9 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0512378
dc.identifierhttp://arxiv.org/abs/cond-mat/0512378
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105579
dc.subjectMesoscale and Nanoscale Physics
dc.titleTransient tunneling current of single electron transistors
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