Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions

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We have prepared light emitting nanocrystalline porous silicon (PS) layers by electrochemical anodization of crystalline silicon (c-Si) wafer and characterized the c-Si/PS heterojunctions using temperature dependence of dark current-voltage (I-V) characteristics. The reverse bias I-V characteristics of c-Si/PS heterojunctions are found to behave like Schottky junctions where carrier transport is mainly governed by the carrier generation-recombination in the depletion region formed on the PS side. Fermi level of c-Si gets pinned to the defect levels at the interface resulting in ln(I) proportional to V^0.5. The barrier height in the reverse bias condition is shown to be equal to the band offset at the conduction band edges. An energy band diagram for the c-Si/PS heterojunction is proposed.
8 pages, 11 figures

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/135810

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0708.1247
 http://arxiv.org/abs/0708.1247

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arXiv