Band edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions

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dc.creatorIslam, Md. N.
dc.creatorRam, Sanjay K.
dc.creatorKumar, Satyendra
dc.date2007-08-09
dc.date.accessioned2026-07-07T08:22:54Z
dc.date.available2026-07-07T08:22:54Z
dc.descriptionWe have prepared light emitting nanocrystalline porous silicon (PS) layers by electrochemical anodization of crystalline silicon (c-Si) wafer and characterized the c-Si/PS heterojunctions using temperature dependence of dark current-voltage (I-V) characteristics. The reverse bias I-V characteristics of c-Si/PS heterojunctions are found to behave like Schottky junctions where carrier transport is mainly governed by the carrier generation-recombination in the depletion region formed on the PS side. Fermi level of c-Si gets pinned to the defect levels at the interface resulting in ln(I) proportional to V^0.5. The barrier height in the reverse bias condition is shown to be equal to the band offset at the conduction band edges. An energy band diagram for the c-Si/PS heterojunction is proposed.
dc.description8 pages, 11 figures
dc.identifierhttps://arxiv.org/abs/0708.1247
dc.identifierhttp://arxiv.org/abs/0708.1247
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/135810
dc.subjectMaterials Science
dc.titleBand edge discontinuities and carrier transport in c-Si/porous silicon heterojunctions
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